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| Advanced Technical Information VUI 30-12 N1 Rectifier Module for Three Phase Power Factor Correction Typical Rectified Mains Power Pn = 15 kW at Vn = 400 V 3~; fT = 15 kHz; TC = 80C Transistor T Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) TC = 25C TC = 80C VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA; L = 100 H VCE = VCES; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 95 65 100 VCES 10 V V A A A s Features * NPT IGBT with low saturation voltage * fast recovery epitaxial diodes (FRED) * module package: high level of integration solder terminals for PCB mounting isolated DCB ceramic base plate large creepage and strike distances Applications Three phase rectifier with power factor correction, set up as follows: * input from three phase mains - wide range of input voltage - mains currents approximately sinusoidal in phase with mains voltage - topology permits to control overcurrent such as in case of input voltage peaks Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.7 1.9 4.5 1.8 400 100 70 500 70 3.0 2.2 3.3 240 0.6 2.0 6.5 1.6 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.3 K/W K/W * output - direct current link - buck type converter - reduced output voltage - possibility to supply boost converter, inverter etc. VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH IC = 20 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 20 A VGE = 15 V; RG = 22 * required components - one power semiconductor module per phase - one inductor and one capacitor per phase on mains side - output inductor, depending on supplied circuit VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 600 V; VGE = 15 V; IC = 50 A with heatsink transfer paste IXYS reserves the right to change limits, test conditions and dimensions. (c) 2001 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 106 Advanced Technical Information VUI 30-12 N1 Diodes D1 - D4 Symbol VRRM IF25 IF80 Symbol VF IR IRM t rr RthJC RthJH Module Symbol TVJ Tstg VISOL Md Symbol IISOL 1 mA; 50/60 Hz; t = 1 min Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 3600 2 - 2.5 C C V~ Nm Conditions TVJ = 25C to 150C TC = 25C TC = 80C Conditions IF = 20 A; TVJ = 25C TVJ = 125C VR = VRRM; TVJ = 25C VR = 0.8VRRM; TVJ = 125C IF = 30A; diF/dt = -250 A/s; TVJ = 125C VR = 540 V with heat transfer paste Maximum Ratings 1200 40 25 V A A Characteristic Values min. typ. max. 2.2 1.9 2 16 400 2.6 2.4 0.75 V V mA mA A ns 1.3 K/W K/W Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 5 35 mm g dA, dS Weight Dimensions in mm (1 mm = 0.0394") (c) 2001 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 2-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 106 |
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